Double crystal x-ray diffraction simulations of diffusion in semiconductor microstructures
نویسندگان
چکیده
منابع مشابه
X-ray diffraction characterization of multilayer semiconductor structures*
The analysis of double-crystal x-ray rocking curves of single-crystal layered structures can give valuable information on layer strains, displacement of atoms from normal lattice sites (which reduces the structure factor), crystallographic misorientations, and crystal defects. Both strains and misorientations cause shifts in the Bragg angle. These two effects are readily separated using two or ...
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7 VP T J üú û üŗ 4 J W VN»»S » û þĀŗ VS O ". . *Ć Ğ Ğ /,(Ą ðĞ Ć Ć ăāĂĚ ăÿüĚ Āú Ě þăüû Ě üŗ Preface " Jokainen tsäänssi on mahdollisuus! " – Matti Nykänen (Every chance is an opportunity) The work presented in this thesis was carried out in Optoelectronics Laboratory , of Electrical Engineering between 2003 and 2012. I want to express my sincere gratitude to Professor Harri Lipsanen for supervis...
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generally arranged at a distance of 0.1 nm to 0.5 nm from one another. When such a substance is irradiated with X-rays having a wavelength roughly equivalent to the interatomic or intermolecular distance, the Xray diffraction phenomenon will take place. X-ray diffraction is widely used in the semiconductor field because it is nondestructive and yields crystal structure information relatively ea...
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A method for computer simulation of time-resolved x-ray diffraction (TRXD) in asymmetric Laue (transmission) geometry with an arbitrary propagating strain perpendicular to the crystal surface is presented. We present two case studies for possible strain generation by short-pulse laser irradiation: (i) a thermoelastic-like analytical model; (ii) a numerical model including the effects of electro...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1998
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.367159